Bo Mạch Điều Khiển Fz600R17Ke4

IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues

Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 1700 V

Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom IC 600 840 A A

PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1200 A

Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 3350 W

Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V

CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V

VCE sat 1,95 2,35 2,45 2,30 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C

Gate-Schwellenspannung Gatethresholdvoltage IC = 24,0 mA, VCE = VGE, Tvj = 25°C VGEth 5,20 5,80 6,40 V

Gateladung Gatecharge VGE = -15 V ... +15 V QG 6,10 µC

InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 1,3 Ω

Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 49,0 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 1,60 nF

Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA

Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 600 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Ω td on 0,24 0,28 0,30 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C

Anstiegszeit,induktiveLast Risetime,inductiveload IC = 600 A, VCE = 900 V VGE = ±15 V RGon = 1,2 Ω tr 0,05 0,055 0,055 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C

Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 600 A, VCE = 900 V VGE = ±15 V RGoff = 1,2 Ω td off 0,70 0,74 0,78 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C F

allzeit,induktiveLast Falltime,inductiveload IC = 600 A, VCE = 900 V VGE = ±15 V RGoff = 1,2 Ω tf 0,08 0,13 0,15 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C

EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 600 A, VCE = 900 V, LS = 60 nH VGE = ±15 V, di/dt = 6200 A/µs (Tvj = 150°C) RGon = 1,2 Ω Eon 85,0 120 135 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C

AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 600 A, VCE = 900 V, LS = 60 nH VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C) RGoff = 1,2 Ω Eoff 110 180 200 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C

Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 1000 V VCEmax = VCES -LsCE ·di/dt ISC tP ≤ 10 µs, Tvj = 150°C 2700 A Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proIGBT/perIGBT RthJC 0,0450 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proIGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,0170 K/W

TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C

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