R-Shaped Appearance With Slot , Sensing Distance 5 mm , Non Modulated Light , PNP Transistor Output
| Appearance | R-shaped |
|---|---|
| Luminous method | Non-modulated |
| Sensing method | Through-beam type (with slot) |
| Sensing distance | 0 to 5 mm (slot width) |
| Operation mode | Dark-ON/Light-ON (selectable) |
| Standard sensing object | Opaque : 2 x 0.8 mm min. |
| Differential distance elements | 0.025 mm max. |
| Light source | GaAs infrared LED with a peak wavelength of 940 nm |
| Indicator | Light indicator (red) |
| Power supply voltage | 5 to 24 VDC (-10% to 10%) (ripple (p-p): 10% max.) |
| Current consumption | Average: 30 mA max. |
| Control output (Output type) | PNP open collector |
| Control output (Load power supply voltage) | 5 to 24 VDC |
| Control output (Load current) | 50 mA max. |
| Control output (Residual voltage) | 1.3 V max. (at a 50 mA load current) |
| Response frequency elements | 1 kHz min. (average 3 kHz) （See "Measurement condition of Response frequency elements"） |
| Ambient illumination | 1000 lx max. with fluorescent light on the surface of the receiver |
| Ambient temperature | Operating: -25 to 55 CEL Storage: -30 to 80 CEL (with no icing or condensation) |
| Ambient humidity | Operating: 5% to 85% Storage: 5% to 95% (with no icing or condensation) |
| Vibration resistance | 20 to 2,000 Hz(peak acceleration 100 m/s**2), 1.5 mm double amplitude for 2 h (4 min periods) each in X, Y, and Z directions |
| Shock resistance | 500 m/s**2 for 3 times each in X, Y, and Z directions |
| Degree of protection | IP50 |
| Connection method | Connector type direct soldering possible |
| Weight | paked state: Approx. 2.2 g |
| Material | Case: Polybutylene phthalate (PBT) Cover: Polycarbonate(PC) Emitter/receiver: Polycarbonate(PC) |
